25 Dec 2025
Insight into the thermodynamic properties of vanadium silicides for advanced electronic applications employing DFTPublisher siteJournal of Nanoparticle Research, Semiconductor materials and interfaces
Active, last published 2026
In chalcogenide semiconductor thin films
Ibtissam
Guesmi
Scholar“Research focused on Chalcogenide Semiconductor Thin Films and adjacent fields.”
Mohamed I University
Morocco
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63
Citations
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01 · About the work
What I study
btissam Guesmi is a researcher working on Chalcogenide Semiconductor Thin Films. A fuller summary will appear once they update their profile.
02 · Reach
Publication output and reach
Ibtissam's work has been cited 63 times across 3 active years. Bars show publications per year; the line shows cumulative citation totals across publications first appearing in each year.
03 · Research focus
Topics
Chalcogenide Semiconductor Thin Films×7Heusler alloys: electronic and magnetic properties×7Advanced Thermoelectric Materials and Devices×62D Materials and Applications×4Intermetallics and Advanced Alloy Properties×4
04 · Where I am
Affiliations
Affiliation on published researchMohamed I University, MoroccoDrawn from the institution listed on this researcher’s published work.
Research themes (UN SDGs)
05 · Selected work
Recent publications
11 works7 Aug 20251cites
First-Principles study of high-temperature thermoelectric performance induced by hydrogenation of ZnAs and CdAs monolayersPublisher siteSurfaces and Interfaces, Advanced Thermoelectric Materials and Devices
21 Jan 20251cites
A First-Principles Study of the Effect of Spin–Orbit Coupling on the Optoelectronic and Magnetic Properties of Manganese DistannidePublisher siteJournal of Electronic Materials, Heusler alloys: electronic and magnetic properties
1 Jan 20252cites
Determination of the Structural and Optoelectronic Properties of the Tetragonal Monochalcogenide TlS Using Wien2k SoftwarePublisher siteLecture notes in electrical engineering, Solid-state spectroscopy and crystallography
1 Jan 20251cites
Thermoelectric Properties of the Tetragonal Iron Antimonide FeSb2 as an Electrode Material for Li-Ion BatteriesPublisher siteLecture notes in electrical engineering, Advanced Thermoelectric Materials and Devices
8 Nov 20244cites
Elastic properties of TiS2 material at high pressure by a first-principles DFT approachPublisher siteTheoretical Chemistry Accounts, MXene and MAX Phase Materials
28 Oct 20245cites
Study of structural, electronic, optical and mechanical properties under pressure of GeTe for use in optoelectronic devicesPublisher siteEmergent Materials, Phase-change materials and chalcogenides
27 Jun 20243cites
FP-LAPW calculations of the structural, and optoelectronic properties of vanadium silicide compound for optoelectronic applicationsPublisher siteSolid State Communications, Semiconductor materials and interfaces
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