article
In efforts to improve silicon-based modulators, we propose and demonstrate a novel W-shaped doping profile aiming at enhancing the modulation efficiency of the phase shifter without significant degradation in the insertion loss and bandwidth. In this paper, we compare the proposed junction to the conventional lateral PN junction with respect to their efficiency, insertion loss, and capacitance. Through multiple simulations, the W-shaped junction shows an improvement in the modulation efficiency with <i>V<sub>π</sub>L</i> of 0.79V.cm at 2V bias compared to the lateral counterpart achieving <i>V<sub>π</sub>L</i> of 1.35V.cm at the same bias voltage.
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DOI: 10.1117/12.3044106
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