article · Journal of the Chinese Chemical Society
Abstract Doped tin oxide (SnO 2 ) thin films (Sn 1− x O 2 :Al x where x = 0%, 2%, 4%, and 6 at.%) were synthesized by electrochemical deposition method. The impact of Al doping on the structural, optical, electrical, and photocatalytic properties of the synthesized films was mainly investigated. The Mott Schottky analysis revealed the increase of the major charges density with the decrease of the space charge width by the inclusion of Al doping. X‐ray diffraction results showed that the films possess tetragonal lattice structures. The intensities of the XRD peaks were increased with Al doping. UV–Vis–NIR spectrophotometry analysis revealed that Sn 1− x O 2 :Al x films exhibited high transmittance reach up to 90% in the visible region. The optical bandgap gradually increased with higher Al doping concentration and lay within the range of 3.7 and 3.83 eV. Electrical characterization revealed that Al doping content enhanced the electrical conductivity of tin oxide films. The photodegradation rate increased to 94.7% by increasing the Al doping concentration.
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DOI: 10.1002/jccs.70149
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