Recent developments in modified graphitic carbon nitride-based materials for electrochemical sensing of emerging contaminants and energy storage. A review

Abstract

Graphitic carbon nitride (g-C 3 N 4 ), a polymeric semiconductor with a graphite-like layered structure, has gained significant attention in electrochemical sensing and energy storage applications due to its large surface area, abundant active sites, metal-free nature, low cost, and simple synthesis. However, pristine g-C 3 N 4 suffers from poor electrical conductivity and significant irreversible capacity loss, which limit its practical performance. This review highlights recent advances in modification strategies aimed at improving the properties of g-C 3 N 4 -based materials for enhanced electrochemical detection of emerging pollutants and energy storage applications. Key approaches include heteroatom doping, defect engineering, heterojunction construction, and surface modification through various synthesis techniques. In addition, the review discusses current challenges and provides future perspectives for researchers exploring modified g-C 3 N 4 materials in electrochemical sensing and energy storage technologies.