PN Junction Optimization for High-Speed Silicon Photonic Modulators

Abstract

PN-junction-based modulators are widely used in silicon photonic transceivers for different applications. Different junction shapes have been proposed in the literature. This work studies the optimization of the PN junction by tailoring the doping profile to achieve a high-efficiency modulator with sufficient bandwidth. For this purpose, a new N-shaped junction is proposed, which achieves superior performance compared to other junction shapes. The proposed junction has an efficiency that is 60% better than that of the lateral PN junction for the same doping condition, while maintaining a high bandwidth similar to other junctions such as the L-shaped and S-shaped designs. A junction design with an estimated RC bandwidth between 70 GHz and 94 GHz is also proposed. The impact of using the proposed junction in micro-ring modulators (MRMs) is also studied. N-shaped junctions in MRM demonstrated a 112% increase in electro-optic bandwidth over the vertical PN junction, with 60% and 140% improvements in extinction ratio (ER) and optical modulation amplitude (OMA), respectively, compared to the lateral PN junction.