Optoelectronic properties of an off-center donor atom in a wedge-shaped quantum dot under the combined effect of electric and magnetic fields

Abstract

In this study, we use the effective mass approximation and the finite difference method to investigate the optoelectronic properties of a donor impurity confined in a wedge-shaped quantum dot (WSQD). We analyze the energy transitions, dipole element matrix, and linear, nonlinear, and total absorption coefficients. The influence of electric and magnetic fields, as well as the displacement of the donor atom along the WSQD’s axis, are considered. The numerical calculations reveal that the transition energy and dipole matrix element are significantly affected by the size and shape of the WSQD, along with the position of the impurity. Our results provide valuable insights for optimizing the performance of optoelectronic devices, such as photodetectors and lasers, by adjusting the size and shape of WSQDs.