Numerical simulation and performance analysis of SiGe-based p–i–n solar cells

Abstract

Abstract Numerical simulations using SCAPS-1D are carried out to analyze SiGe-based p–i–n solar cells. SiGe, an IV-group semiconductor with an indirect and tunable bandgap, is suitable for multi-junction applications. By adjusting the aluminum content in Al x Si 1– x Ge, light absorption and power output can be improved. This work examines how layer thickness, doping concentration, parasitic resistances, and back-contact work function affect key photovoltaic parameters, including open-circuit voltage ( V oc ), short-circuit current density ( J sc ), conversion efficiency ( η ), and fill factor (FF). The study finds that temperature and intrinsic layer thickness play a significant role in device performance. Optimal results are achieved with V oc = 0.90 V, J sc = 19.56 mA cm −2 , FF = 87.26%, and η = 15.46%.