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Numerical investigation of CdS/CdTe thin-film solar cells using SCAPS-1D: Influence of layer thickness and temperature on device performance

20251 citationOpen accessChouaib Doukkali University

Abstract

This study presents a comprehensive numerical investigation of CdS/CdTe thin-film solar cells using SCAPS-1D. The impact of the absorber (CdTe) and buffer (CdS) layer thicknesses, as well as the operating temperature, on key photovoltaic parameters namely open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), and power conversion efficiency (PCE) is systematically analyzed. The results indicate that optimal performance is achieved with a CdTe thickness of 2.5–3.0 μm and a CdS buffer of 10–20 nm. Additionally, device performance slightly degrades at elevated temperatures due to enhanced recombination and carrier mobility reduction. This simulation framework provides predictive guidance for improving real-world CdS/CdTe devices and aligns closely with recent experimental findings.

Research topics

  • Chalcogenide Semiconductor Thin Films
  • solar cell performance optimization
  • Semiconductor materials and interfaces

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DOI: 10.1016/j.hybadv.2025.100582

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