New approach to improve low-noise amplifier performances for 2.45 GHz wireless applications

Abstract

This article describes a new approach to improving the performance of low-noise amplifiers (LNA) operating at 2.45 GHz. It focuses on the use of novel circuit topologies, advanced techniques to reduce the noise figure (NF), and simultaneous gain enhancement. Such improvement is made possible by advancements in CMOS technologies, such as gallium arsenide (GaAs), and the careful selection of impedance matching network components. The GaAs-based ATF-21170 transistor is used as the active element in the proposed LNA. This LNA operates in class $\mathbf{A B}$ and is designed using the Advanced Design System (ADS) software. Simulations yield a gain of 15.918 dB and a noise figure of $\mathbf{1. 1 4 3 ~ d B}$. The input (S11) and output (S22) reflection coefficients are -20.136 dB and -15.205 dB, respectively. The implementation layout measures $\mathbf{4 0} \times \mathbf{8 3. 5} \mathbf{~ m m}^{\mathbf{2}}$. The final results demonstrate enhanced performance for receivers used in wireless communications, such as radar systems, Wi-Fi, and satellite communications…