article · Electronics
Band structure and gain in a Ge/Ge1-xSnx/Ge quantum well are described theoretically using a 14-band k.p model. It has been shown that the quantum well width and the α-Sn concentration considerably modify the conduction and valence subband structure, and, as a result, the optical gain changes with the insertion of a very small concentration of α-Sn. In particular, we have determined the necessary injection carrier density Nj and the critical α-Sn concentration for elevated high gain lasing. It is found that for Nj = 1.5 × 1018 cm−3, we achieved a maximum peak gain for α-Sn concentration of the order 0.155. We can predict that Ge/Ge1-xSnx/Ge QWs should be manufactured with an α-Sn concentration less than 0.155 in devices for optoelectronics applications such as telecommunication and light emitting laser diodes.
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DOI: 10.3390/electronics13214142
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