Magnetoconductivity and Quantum Interaction Mechanisms in 2D SiGe Heterostructures

Abstract

This paper offers a comprehensive analysis of the behavior of electrical magnetoconductivity in 2D p-Si/SiGe/Si heterostructures at very low temperatures. We examined the mechanisms of electrical conduction based on the theories of Weak Localization (WL) and Electron–Electron Interactions (EEI) in the diffusive regime. The results observed between 0.3[Formula: see text]K and 1.8[Formula: see text]K confirm the validity of existing theories. They also show that the influence of the magnetic field on carrier–carrier interactions, particularly through the triplet effect, follows a logarithmic relationship with the Fermi liquid constant. This study highlights the impact of quantum interactions on conductivity and aids in better understanding the behavior of low-dimensional materials subjected to magnetic fields.