Linearization, EM Simulation, and Realization of a 40 DBM Class-AB Gan Power Amplifier

Abstract

This research article presents the comprehensive design and analysis of a 2.45 GHz RF power amplifier operating at 40 dBm using GaN technology. The amplifier is built around the CGH40010F transistor and employs a Linearization with Nonlinear Components Method (LINC) for enhanced linearity. The study outlines the design methodology, including the selection of the CGH40010F transistor and the application of the LINC technique. It investigates the amplifier's performance characteristics, including power output, linearity, and efficiency at the 2.45 GHz frequency. The findings reveal a robust Class-AB GaN power amplifier capable of delivering 40 dBm of power while maintaining excellent linearity, making it suitable for demanding RF applications. The utilization of GaN technology and the LINC method demonstrates the potential for achieving high-performance amplifiers in modern wireless communication systems. In conclusion, this article provides valuable insights into the design and linearization of high-power GaN amplifiers, showcasing the capabilities of the CGH40010F transistor and the effectiveness of the LINC technique for achieving superior performance in RF power amplification.