High-Efficiency Power Amplifier Design With a Broadband Performance

Abstract

This paper presents a comprehensive methodology for designing broadband power amplifiers (PAs) with over an octave of bandwidth. To achieve wideband operation, broadband impedance matching networks are implemented at both the input and output of the PA. A load-pull technique is employed to predict the optimal load impedance required for high efficiency and output power across the targeted frequency range. A GaN-HEMT transistor, specifically the CGH40010F model, is selected for its high power density and broadband capability, enabling circuit operation over a wide bandwidth from 0.5 GHz to 3.0 GHz. The proposed PA achieves a DRAIN efficiency (PAE) of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{6 0. 4 \% - 7 4. 3 \%}$</tex> and a saturated output power of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{3 8. 5 - 4 1. 9 d B m}$</tex> across the entire band, demonstrating the effectiveness of the design strategy for next-generation broadband wireless applications.