Enhancing Solar Cell Efficiency with GaAs/Al0.3Ga0.7As Systems: Electronic and Optical Properties Analysis

Abstract

This study aims to enhance the optical and electrical performance of GaAs (gallium arsenide) solar cells by incorporating p-type and n-type Al0.3Ga0.7As layers. The physical parameters were simulated by using density functional theory (DFT) through generalized gradient approximation (GGA) for potential exchange-correlation from implementation Win2K code. The SCAPS software and impedance spectroscopy method were also used to investigate the solar cell characteristics. Our findings demonstrate that adding these layers significantly improves efficiency by 31% compared to a standard GaAs pin-junction structure. This enhancement is attributed to optimized light absorption and reflection through doping, leading to a high-performance solar cell.