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Electrical and Optical Characterization of Sputtered and Annealed ZnO/Ag Structures for TCO Applications

Abstract

This study explores the optoelectronic properties of Indium Tin Oxide (ITO) and low-cost ZnO/Ag bilayer thiny films, with a particular focus on the effects of post-deposition annealing at 400°C. Optical analysis reveals that ITO exhibits strong UV absorption and high transparency in the visible-NIR range. In contrast, unannealed ZnO/Ag films show a distinct Surface Plasmon Resonance (SPR) peak in the visible spectrum, while annealing at 400°C enhances their transparency in the visible-NIR region. Electrical measurements demonstrate that ITO retains superior conductivity, whereas unannealed ZnO/Ag offers moderate transparent conductivity. However, annealing ZnO/Ag at 400°C increases its sheet resistance, altering its electrical behavior. This comparative study underscores the potential of cost-effective ZnO/Ag films as viable alternatives to expensive ITO, with tunable properties for specific transparent conductive applications.

Research topics

  • ZnO doping and properties
  • Nanomaterials and Printing Technologies
  • Thin-Film Transistor Technologies

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DOI: 10.1109/cce67728.2025.11272012

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