Determining the Efficiency of Prepared Thin-Film Organic/Si Solar Cell

Abstract

A film of DBM is deposited on a -Si single crystal to fabricate a p-DBM/n-Si (thickness ≈ 90 nm).Researchers have explored the electrical and photoelectrical characteristics of photovoltaic cells byanalyzing current. have been studied through current analysis. Photovoltaiccell. Electrical and photoelectrical properties have "The matter has been under investigation." by thecurrent density – voltage measurements at different temperatures ((J-V) characteristics)."The fabricatedcell displayed rectifying properties, with a rectification ratio." R=4043 at 1 Volt. The obtained value ofthe series resistance Rs and the shunt resistance Rsh at room temperature were determined to be 750 Ω and1700 Ω, respectively. At low voltages (V<1V), the dark forward current density is controlled by thetunneling mechanism, while at relatively high voltage (V>1V), a space charge-limited-conductionmechanism is observed, controlled by a single trap level. The C-V measurements indicate an abruptjunction with a built-in voltage of 0.78V. Finally, the cell exhibited photovoltaic characteristics with anopen-circuit voltage of 780 mV, a short-circuit current of 1.2x10-6 mA, and a power conversion efficiencyof 1.48%. These parameters were estimated at room temperature under light illumination from a sourcewith an input power density of 20 mWatt/cm2. These parameters were estimated at room temperatureunder light illumination from a source with an input power density of 20 mWatt/cm2.