Design of An S-Band Power Amplifier Using Loadpull

Abstract

This paper outlines the development of an S-band Power Amplifier (PA) with a GaN HEMT technology transistor to achieve high output power. The methodology used in this study is the loadpull technique, which aims to determine the optimal impedance for maximizing gain and efficiency. The matching process involved the use of impedance transforming lines in microstrip technology. The design of the PA matching networks incorporated two impedance transforming lines. Their characteristics parameters were calculated before moving to simulations on ADS software (Advanced Design System). Through the use of an optimization tool, a successful matching was achieved. The resulting device demonstrated an output power of 42.532 dBm, a maximum gain of 13.532 dB, and a Power-Added Efficiency (PAE) of 56.501%.