Current-Voltage of ALGaAs /GaAs HEMTs

Abstract

HEMTs, or High Electron Mobility Transistors, are classified as hetero-structure field effect transistors. As it demonstrated better RF and DC performance in higher power and frequency applications, it grew in prominence over time. Low noise is yet another significant benefit that HEMT provides. The creation of a two-dimensional electron gas (2-DEG) in the channel layer is connected to HEMT operation. By providing high electron mobility, high electron velocity, and reduced noise, the 2-DEG zone aids in reducing electron scattering and collision. We suggest an AlGaAs/GaAs HEMT construction in light of the benefits and applications provided by HEMT. The present work is dedicated to studying the influence of the Aluminum gallium arsenide/ gallium arsenide (AlGaAs/GaAs). The current-voltage characteristic, which shows how the drain-source current changes in response to the gate voltage modulation, has been the subject of discussion to control the effect of these characteristics on the device performance. The Silvaco T-CAD simulator, which focuses on microwave frequency-based device applications, significantly highlights the different HEMT device performance reports.